As the dimensions of devices have minimized, two-dimensional dopant profiling of semiconductor devices has become an important technique for obtaining the required electrical characteristics. As a result, various analytical techniques have been developed to obtain two dimensional information. Scanning capacitance microscopy (SCM) has been shown to be useful for quantitative two dimensional dopant profiling.

In this study, GaN Light emitting diodes were grown by MOCVD and the samples were prepared using a cross-section polisher for SCM measurements. SCM was performed on Veeco MultiMode SPM. We show that SCM enables quantitative two-dimensional dopant profiling of p- and n-GaN at concentrations around 10¹⁹cm^-3. It is also possible to analyze a sub-um p-GaN and investigate the dopant distribution in the InGaN/GaN heterostructure device. We compare SCM signal with secondary ion mass spectroscopy profile.

References

1. J.F. Marchiando and J.J. Kopanski, J. Vac. Sci. Technol. B 22, 411 (2004).

2. M.L. O'Malley, G.L. Timp, S.V. Moccio, J.P. Garno and R.N. Kleiman, Appl. Phys. Lett., 74, 272 (1999).

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1. Quantitative analysis of two-dimensional dopant profile in Mg doped GaN