Heterostructures containing submonolayers of narrow band gap semiconductor embedded in wide band gap one are attractive objects. Light-emitting diodes and lasers with fraction-monolayer active region based on II-VI compounds demonstrated better characteristics in comparison with corresponding quantum well (QW) devices. The influence of single CdTe monolayer film insertion on the luminescence and structural characteristics of CdZnTe/ZnTe QW was investigated by the photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) methods. The structures studied were grown by MBE on 3⁰ off - (100) GaAs substrate and contained 8nm thick Cd_0.4Zn_0.6Te QW with or without CdTe monolayer film embedded in the middle of QW. Low temperature PL investigations showed that insertion of CdTe layer resulted in two times narrowing of the QW PLband and one order of value increase of the QW PL intensity. Temperature dependencies of the QW PLspectra and time-resolved PL investigations indicated that these changes are caused by the increase of shallow localized state density and the decrease of deep one. Smearing of interference fringes in the HRXRD profiles proved the absence of flat interface between CdTe and CdZnTe layers. The latter testifies to that shallow localized states in CdZnTe QW are due to the CdTe insertion.

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