The silicon strip detector represents a new class of one-dimensional position-sensitive single photon counting devices. It allows us to reduce time in XRD measurements of thin films compared to instruments with a single proportional counter. Our detector was mounted at the Philips X'Pert diffractometer with 230 mm instrument radius. Experiments were performed with use of Ni-filtered Cu radiation.

The angular resolution about 0.04^o at low angles was demonstrated for classical Bragg-Brentano geometry measurements of standard reference material (SRM 660) LaB₆. Obtained values were very close to the results achievable for classical proportional counter and X'Celerator.

θ-2θ-scan, w-scan and 2θ-scan of spin valve multilayers were performed by means of the strip detector and the proportional counter. Collected diffractograms showed comparable characteristic features and numbers of counts for acquisition time of the strip detector by two orders of magnitude shorter compared to the proportional counter.

θ-2θ and w-scan of spin valves with the stack composition: substrate Si(100)/SiO_x 47 nm/ buffer layers /IrMn 12 nm/CoFe 15 nm/Al-O 1.4 nm/NiFe 3 nm/Ta 5 nm, with buffers: a - Cu 25 nm, b - Ta 5 nm/Cu 25 nm, c - Ta 5 nm/Cu 25 nm/Ta 5 nm/Cu 5 nm and d - Ta 5 nm/Cu 25nm/Ta 5 nm /NiFe 2 nm/Cu 5 nm allowed us to determine the degree of texture of the samples and its dependence on the buffer features.

θ-2θ profiles of the Ni/Au - glass/[Ni/Au]×15 periodic superlattice and non-periodic multilayers: substrate Si(100)/SiO_x 500 nm/Ta 5 nm/Co 5 nm/spacer/IrMn 10 nm/ Ta 5 nm with different spacers of platinum 0, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, and 1.2 nm were interpreted using the model of non-ideal supperlattice structure based on the Monte Carlo simulation. Interplanar distances in the growth direction of layers were determined.

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