Stimulated emission in InGaN/GaN structures with different quantum well width
|Saulius Miasojedovas 1, Saulius Jursenas 1, Genadij Kurilčik 1, Arturas Zukauskas 1, Shih-Wei Feng 2, Yung-Chen Cheng 2, C.C. Yang 2, Cheng-Ta Kuo 3, Jian-Shihn Tsang 3|
1. Institute of Materials Science and Applied research (IMSAR), Sauletekio al. 9, Vilnius 2040, Lithuania
Light-emitting and laser diodes for green to near-UV region are based on quantum structures with InGaN active region. However, characteristics of devices with multiple quantum wells (MQWs) are not clear so far. One of the most important characteristics of MQWs is the well width. With increasing the well width the emission from MQWs is affected not only by quantum confinement, but by intricate processes due to spinodal decomposition of In and built-in electrical field as well. To maximise spontaneous and stimulated emission, underlying physics should be cleared out and the growth conditions and structure of the MQWs are to be optimised.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Saulius Miasojedovas
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-20 16:17 Revised: 2009-06-08 12:55