Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
|Saulius Jursenas 1, Saulius Miasojedovas 1, G. Kurilcik 1, Arturas Zukauskas 1, P.R. Hageman 2|
1. Institute of Materials Science and Applied research (IMSAR), Sauletekio al. 9, Vilnius 2040, Lithuania
Formation of high-quality bulk-like GaN layers is of great importance since they are used as substrates for further epitaxy of light emitting structures and can facilitate efficient light extraction from light emitting diodes. The best-quality GaN epilayers are obtained by using homoepitaxial growth over bulk GaN crystals. However at present, the size and growth rate of the high-pressure crystals are limited. Hydride vapor phase epitaxy (HVPE) offers large growth rates with relatively good quality of crystals. Optical properties under high excitation conditions, which are important for establishment of laser and high-power LED operation regime, are not well investigated in HVPE grown GaN.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Saulius Jursenas
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-20 16:12 Revised: 2009-06-08 12:55