Ferromagnetic Fe-implanted ZnO
|Kay Potzger 1, Shengqiang Zhou 1, Helfried Reuther 1, Arndt Mücklich 1, F. Eichhorn 1, Norbert Schell 1,2,3, Wolfgang Skorupa 1, Manfred Helm 1, Jürgen Fassbender 1|
1. Forschungszentrum Rossendorf (FZR), Dresden 01314, Germany
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 623 K and an ion fluence of 4x1016 cm-2 (maximum atomic concentration of 5 %), very tiny Fe particles formed inside the host matrix are responsible for the ferromagnetic properties. These particles can be identified only by application of high resolution analysis methods like synchrotron X-ray diffraction, transmission electron microscopy or Mössbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K at the same ion fluence of 4x1016 cm-2 are monodispersed within the host matrix. However, no magnetic coupling between these ions has been observed. This fact is related to the high damage level of the as-implanted ZnO single crystals. The damage is lowered avoiding secondary phase formation by using flash lamp annealing technology resulting in ferromagnetic properties of the Fe doped ZnO at room temperature.
Presentation: Oral at E-MRS Fall Meeting 2006, Symposium E, by Kay Potzger
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-11 01:58 Revised: 2009-06-07 00:44