Ferromagnetic Fe-implanted ZnO

Kay Potzger 1Shengqiang Zhou 1Helfried Reuther 1Arndt Mücklich 1F. Eichhorn 1Norbert Schell 1,2,3Wolfgang Skorupa 1Manfred Helm 1Jürgen Fassbender 1

1. Forschungszentrum Rossendorf (FZR), Dresden 01314, Germany
2. Europen Synchrotron Radiation Facility (ESRF), 6, Jules Horowitz, Grenoble 38000, France
3. ROBL-CRG at the ESRF, B.P. 220, Grenoble F-38043, France

Abstract

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 623 K and an ion fluence of 4x1016 cm-2 (maximum atomic concentration of 5 %), very tiny Fe particles formed inside the host matrix are responsible for the ferromagnetic properties. These particles can be identified only by application of high resolution analysis methods like synchrotron X-ray diffraction, transmission electron microscopy or Mössbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K at the same ion fluence of 4x1016 cm-2 are monodispersed within the host matrix. However, no magnetic coupling between these ions has been observed. This fact is related to the high damage level of the as-implanted ZnO single crystals. The damage is lowered avoiding secondary phase formation by using flash lamp annealing technology resulting in ferromagnetic properties of the Fe doped ZnO at room temperature.

 

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Presentation: Oral at E-MRS Fall Meeting 2006, Symposium E, by Kay Potzger
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-11 01:58
Revised:   2009-06-07 00:44