Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 623 K and an ion fluence of 4x10¹⁶ cm^-2 (maximum atomic concentration of 5 %), very tiny Fe particles formed inside the host matrix are responsible for the ferromagnetic properties. These particles can be identified only by application of high resolution analysis methods like synchrotron X-ray diffraction, transmission electron microscopy or Mössbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K at the same ion fluence of 4x10¹⁶ cm^-2 are monodispersed within the host matrix. However, no magnetic coupling between these ions has been observed. This fact is related to the high damage level of the as-implanted ZnO single crystals. The damage is lowered avoiding secondary phase formation by using flash lamp annealing technology resulting in ferromagnetic properties of the Fe doped ZnO at room temperature.

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