Characterization of Phosphorus Spin Resonance in Silicon Nanowires

Bela D. Shanina 1Alla I. Klimovskaya 1Pjotr M. Lytvin 1Ted Kamins 3Shashank Sharma 3Sergej P. Kolesnik 1Igor V. Prokopenko 1Oksana S. Lytvyn 1Ivan P. Ostrovsky 2

1. V.E.Lashkarev Institute of Semiconductor Physics of NAS of Ukraine, 45 Nauky Prospekt, Kyiv 03028, Ukraine
2. Lviv National Polutechnic University, Lviv, Ukraine
3. Hewlett-Packard Laboratorie, Page Mill Road, Palo Alto, CA 94304-1100, United States

Abstract

Several sets of self-assembled silicon nanowires grown using two different catalytically enhanced methods are characterized using electron spin resonance, scanning electron microscopy, and x-ray diffraction. Some of the samples were highly doped by paramagnetic atoms (P31) during growth. Undoped samples of unattached to substract nanowires show the resonance signal of dangling bonds with g=2.0055 and line width DH=7.2 G. In the doped samples a single line of P31 strongly narrowed was observed. The anisotropy of the P31 g-factor was found, indicating compressive stress T in the nanowires. The dependence of the g-factor on stress was analyzed, and the value of T along the [100] direction was estimated to be T100 » 0.2-0.1 GPa. All spectral lines from nanowires except the signal of dangling bonds are characterized by a small value of the line width 1. Oe≤ DH ≤ 2.6 Oe, which suggest long spin life time.

 

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium C, by Bela D. Shanina
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-04-25 14:46
Revised:   2009-06-07 00:44