Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics
|Lauri Niinisto , Minna Nieminen , Jaakko Niinistö , Matti Putkonen , Jani Päiväsaari|
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FIN-02015 Espoo, Helsinki, Finland
Atomic layer deposition (ALD) was originally developed in the 1970s to process wide band-gap semiconducting II-VI sulfides as well as insulating oxides for thin film electroluminescent (TFEL) displays. ALD is now a mature technique which has found other applications as well, e.g. in producing catalysts and sensors. Currently, ALD is experiencing a breakthrough as a method-of-choice in the semiconductor industry where so-called high-k insulating oxides can be processed by ALD as very thin overlayers with precise thickness control.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Lauri Niinisto
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-14 17:35 Revised: 2009-06-08 12:55