The p-type InP:Zn epilayers were prepared by MOCVD and subsequently doped with Mn by heat treatment after evaporation of Mn on top of InP:Zn epilayers using MBE. The MnO₂ of XRD peaks with the Mn concentration ranged from 0.019 to 0.290 % coincides with the P_4/2/mmm structure of MnO₂ proved by the electron diffraction analysis of TEM without showing any other precipitates. The analysis of PL showed that optical broad transitions related to Mn appeared at 1.233 eV(Ev+0.187 eV), 1.247 eV(Ev+0.173 eV), and 1.261 eV(Ev+0.159 eV) based on band gap energy of 1.42eV at 0K. The samples with the Mn concentrations of 0.290 and 0.062 % revealed that both in the calculated diffraction pattern and experimental pattern of TEM, {010} and {030} spots are missing, indicating the FCC lattice was still maintained after the Mn doping. The forbidden, regularly spaced spots suggest presence of superlattice (a = 11.738 Å), arising from the possible ordering of Mn atoms in the cubic structure of InP. The regularly spaced spots of ordered Mn produce the anomalous Hall effect (AHE) showing the characteristics of diluted magnetic semiconductor, which is caused by hole-mediated ferromagnetism due to the increase of hole concentration in tetrahedrally coordinated semiconductor. It is found that a ferromagnetic semiconductor at 150 K demonstrated by the analysis of TEM and AHE can be successfully formed in diluted magnetic semiconductor based on InMnP:Zn epilayers additionally co-doped with Zn.

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