Magnetoresistance of Ge-Si whiskers with germanium compositions up to 11 at. % was studied in the range of magnetic field up to 14 T. The whisker concentration was close to critical one for metal-insulator transition. Character of dependencies of the whisker magnetoresistance on magnetic field is determined by level of the whisker doping. For insulator samples quadratic field dependence of magnetoresistance is found, while for metalic ones the dependence is exponential. In the whiskers with large germanium content (4-11 at. %) anomal positive magnetoresistance as well as negative magnetoresistance is observed. Negative magnetoresistance is shown to rise with increase of germanium content. The dependencies found are discussed.

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