Simulation of localized exciton hopping in quaternary AlInGaN
|Karolis Kazlauskas 3, G. Tamulaitis 3, Arturas Zukauskas 3, M. A. Khan 4, J. W. Yang 4, J. Zhang 4, G. Simin 4, M. S. Shur 1, R. Gaska 2|
1. Rensselaer Polytechnic Institute, Department of ECSE and Broadband Center, Troy, NY, United States
AlInGaN materials have found applications in the fabrication of high efficiency blue, white, and UV light emitters. Indium is believed to significantly improve the efficiency of semiconductor lasers and light emitting diodes due to carrier localization in the potential fluctuations caused by In clustering in the alloy. Such localization prevents nonradiative carrier recombination. At low temperatures, exciton transport in In-containing nitrides is only possible by phonon-assisted hopping. Observed "anomalous" S- and W-shaped temperature dependences of the photoluminescence (PL) band peak and width, respectively, serve as a signature of exciton hopping.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Karolis Kazlauskas
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-13 13:32 Revised: 2009-06-08 12:55