Magnetotransport investigations of AlGaN/GaN heterostructures grown on bulk GaN, SiC, and sapphire substrates
GES UMR5650 CNRS and Universite Montpellier 2, France, France
We will present the results of the experimental studies of transport properties of two-dimensional electron gas (2DEG) and three-dimensional electrons (that might be responsible for a parallel conduction) in AlGaN/GaN heterostructures grown over high-pressure bulk GaN, sapphire, and insulating SiC substrates. The experimental results include the low field Hall measurements , cyclotron resonance measurements, and cryogenic temperature Quantum Hall Effect studies . The room temperature high field measurements allow us to clearly separate contributions of a parasitic parallel conduction from 2DEG conduction in all investigated heterostructures.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium C, by Wojciech Knap
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-13 10:04 Revised: 2009-06-08 12:55