Raman scattering study of InGaAs/AlAsSb and InGaAs/AlAs/AlAsSb heterostructures
|TERUO MOZUME 1, Nikolai Georgiev 2, Jun-ichi Kasai 1|
1. Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, Tsukuba 300-2635, Japan
InGaAs/AlAsSb quantum wells (QWs) grown on InP substrates are recently attracting much attention for optical and electrical devices. We have reported the near-infrared intersubband transitions from this material system. We have also reported the ultra-fast absorption recovery of 0.69 ps and shown that this material system is suited for the ultra-high speed optical devices used in the optical communication network. However, the growth of this system is pretty difficult. We have already reported that As-interface termination procedure improve the QW property. The PL spectra of Sb-terminated QWs are broadened and red-shifted than that of the equivalent As-terminated version. In order to further improve the interface quality, we have introduced several mono-layers (MLs) of AlAs layer between InGaAs well and AlAsSb barrier.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by TERUO MOZUME
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-12 11:59 Revised: 2009-06-08 12:55