Impact of post-growt thermal annealing on emission of InGaN/GaN multiple quantum wells
|Saulius Jursenas 1, Yung-Chen Cheng 2, Shih-Wei Feng 2, C.C. Yang 2, Cheng-Ta Kuo 3, Jian-Shihn Tsang 3|
1. Institute of Materials Science and Applied research (IMSAR), Sauletekio al. 9, Vilnius 2040, Lithuania
InGaN-based multiple quantum wells (MQWs) are the key structures for high efficiency, long lifetime violet, blue, and green light emitting diodes and laser diodes. During the epitaxial growth of InGaN/GaN structures and during the fabrication of devices, active layers undergo several high-temperature treatments. The distribution of the indium composition and the strain in quantum wells may be changed due to spinodal decomposition and interdiffusion of indium and gallium across the interface of quantum well and barrier after these thermal treatments. This can lead to a change of emission properties of MQWs.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Saulius Jursenas
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-10 12:50 Revised: 2009-06-08 12:55