Low dimension porous silicon based heterostructures for possible optoelectronic and accessory applications
|Liubomyr S. Monastyrsky 1, Volodymyr I. Savchyn|
1. Electronics Department, Lviv National University, 50 Dragomanov str., Lviv 79005, Ukraine
Active films coatings on porous silicon (PS) surface with semiconductors and dielectrics such as oxide (Al2O3, SiOx), chalcogenide materials (ZnS, CdTe,GaSe), polymer films were created. Possibility of optocouple creation for the wide spectral range (as light emitter and detector) using PS was considered. Photoluminescence, electroluminescence, photosensitivity of porous silicon were investigated. Also it was used such additional methodics as photo-TSD, photo- and cathodoluminescence, photovoltaic effect, volt-current charascteristics method.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Liubomyr S. Monastyrsky
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-10 10:29 Revised: 2009-06-08 12:55