Semiconductor nanostructures for infrared applications
|NERIJA ZURAUSKIENE 1, Steponas Asmontas 1, Adolfas Dargys 1, Jurgis Kundrotas 1, Griet Janssen 2, Etienne Goovaerts 2, Saulius Marcinkevicius 5, Paul M. Koenraad 3, Joachim H. Wolter 3, Rosa Leon 4|
1. Semiconductor Physics Institute, A.Gostauto 11, Vilnius LT-2600, Lithuania
Intensive research in the field of self-assembled quantum dots (QDs) has resulted in rapid improvement in the understanding of the principal properties of QDs for developing new quantum devices such as quantum dot infrared photodetectors (QDIP). QDs provide two main advantages for this application: 1) the ability to absorb the normally incident infrared photoexitation, and 2) long (up to ns) photoexcited carrier lifetimes. Normal incidence photoexcitation is desirable for the fabrication of a two-dimensional focal plane array for passive location imaging applications. The long lifetimes ensure higher responsitivity of the detector allowing increased temperature operation. Due to discrete energy levels QDs could be used for tunable narrow-band detection or "fingerprint" of various objects observed from the space. In addition, for QDIP operation at space conditions it is important to investigate also influence of high energy particles irradiation on optical properties of QDs systems.
Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium F, by NERIJA ZURAUSKIENE
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-09 09:56 Revised: 2009-06-08 12:55