Optical characterization of GaN doping superlattices as grown, hydrogen implanted and annealed.
|Herbert Willi Kunert 1, D J. Brink 1, Michael Hayes 1, J. Malherbe 1, L. Prinsloo 2, Józef Barnaś 3|
1. University of Pretoria, Department of Physics, University str., Pretoria 0084, South Africa
GaN doping superlattices (DSL's) were grown epitaxially (MBE) with eight periods of n-GaN/p-GaN (50nm/50nm) doped: 1x1018cm-3(n-Si) and 1x1018cm-3(p-Mg) with a thin AIN nucleation layer (20nm) on a 2-inch single-side-polished sapphire (0001) wafer. Low temperature photoluminescence and Raman spectroscopy (PL), (RS)-respectively were used to characterize the as grown and hydrogen implanted (dose=1012-1017cm-2, Energy 1MeV), samples. From the as grown sample the PL yields the well known DAP's band. In addition, in the region 2.1-2.8 eV (where normally the YL band is observed in bulk Mg-doped GaN) we monitor several mini, well-resolved separate bands these do not resemble theYL band. Temperature and laser power dependence do not affect the energy position of these peaks. Implantation decreases the intensities of most bands but does not induce new optically active transitions. Annealing at 900C reveals a broad solid unstructured YL band centred at 2.3 eV.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Herbert Willi Kunert
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-07 13:27 Revised: 2009-06-08 12:55
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