An Atomistic view of the oxidation mechanism of silicon clusters on (0001) SiC 3x3 reconstructed surface
|Kian Ping Loh 1, Jia Mei Soon 2, Ida Ma 3|
1. National University of Singapore (NUS), Singapore, Singapore
Silicon carbide (SiC) is a promising material for applications in high-power and high-temperature electronic devices. Besides these highly desirable properties, SiC is the only compound semiconductor that can be thermally oxidized to form SiO2. However, SiC exhibits worse electrical passivation characteristics compared to Si due to the presence of silicon oxycarbide species that produce interfacial states at the oxide/SiC interface. For this reason, studies of the oxidation mechanism and chemical composition of thermally grown oxides on SiC have attracted a lot of attention recently.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Jamie Soon
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-06 10:33 Revised: 2009-06-08 12:55