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X-ray photoemission study of manganese thin films deposited on layered semiconductor

Frederic Mirabella 2Bruce A. Parkinson 1Jacques Ghijsen 

1. Colorado State University, Department of Chemistry, Fort Collins, CO, United States
2. University of Namur, Laboratoire Interdisciplinaire de Spectroscopie Electronique (LISE), 61 rue de Bruxelles, Namur 5000, Belgium

Abstract

Germanium sulphide (GeS) and tin diselenide (SnSe2) present anisotropic properties due to their layered crystal structures. In fact, these crystals are composed of atomic layers interacting with each other only by van der Waals forces. Recently these materials have been used to prepare new diluted magnetic semiconductors (DMS) by substituting some of Ge or Sn atoms by manganese in crystal lattices forming Ge1-xMnxS and Sn1-xMnxSe2. Aiming at a comparison of Mn atoms behaviour with the layered crystal, Mn/GeS and Mn/SnSe2 thin films have been grown and investigated by X-ray and synchrotron radiation induced photoelectron spectroscopies. We present here XPS investigations of in situ grown Mn/SnSe2 for coverages ranging from sub-monolayer to thin films that show interesting behaviour from the structural as well as from the reactivity points of view. Meausrements in fact suggest that a Mn-Sn alloy is formed at the interface and that Mn atoms first deposit following an atomic netting pattern due to the particular structure of SnSe2 (001) face.

 

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Frederic Mirabella
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-02 10:14
Revised:   2009-06-08 12:55