Materials produced by modern nanotechnology, as a rule, have a complicated structure. It should be noticed that most of diagnostic techniques characterize the materials either integrally or locally, while the methods revealing, for example, topographic peculiarities of the complicated systems do not always allow the different structures to be compared quantitatively. Moreover, traditional techniques allow no internal bindings to be revealed in complicated systems, while these bindings determine many system properties.
In the present paper a new approach to characterization of both III-nitrides and nanostructures based on III-V and II-VI compounds is presented. The approach uses the multifractal analysis to process the Atomic-Force Microscopy data, the mapping data of electrical and optical properties of these systems. As a result, such characteristics of the complicated systems as the level of self-organization, the degree of order, the degree of local symmetry disruption could be quantitatively obtained.
The degree of order of a III-nitride mosaic structure has been established to characterize the structural properties more exactly than surface roughness. The direct correlation between mobility, optical properties and degree of order of the III-nitride mosaic structure has been established.
For the first time, the level of self-organization of a quantum dot system based on II-VI and III-V semiconductor compounds have been quantitatively determined.