InN Polycrystalline Films: Growth, Structure and Optical Characterization

Vladislav Y. Malakhov 

Institute for Problems of Materials Science, 3, Krzhizhanovsky, Kyiv 03142, Ukraine

Abstract

The present survey deals with some results of researches of InN polycrystalline films which the author has obtained during last 30 years.
And though recent discovery of single crystalline layers of hexagonal InN have already changed our representations about bandgap of this compound having transformed it from wide bandgap to narrow one semiconductor, nevertheless many fundamental parameters have not under-gone essential changes but that have changed still demand to be understood and explained. In the paper arguments pro and contra concerning possible revision of the fundamental gap value of InN are resulted. On a basis of long-term experience of growing InN polycrystalline films and also the carried out complex researches of both optical and electronic properties of nitride films, the debatable issues are considered in connection with discovery of the narrow InN bandgap.

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Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Vladislav Y. Malakhov
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-08-10 12:06
Revised:   2009-06-07 00:44
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