From Giant magnetoresistance to current-induced magnetic switching and excitations in magnetic structures
|Józef Barnaś 4,5, Vitalii Dugaev 1, Albert Fert 3, Martin Gmitra 4, Herbert W. Kunert 2, Malgorzata Wawrzyniak 4, I. Weymann 4|
1. Instituto Superior Técnico, Lisboa 1049-001, Portugal
Giant magnetoresistance (GMR) effect in magnetic multilayers is a consequence of spin dependent scattering and spin dependent electronic structure. The effect describes the way in which magnetic structure of a system modifies its transport characteristics. An effect associated with GMR is the current-induced magnetic switching between different magnetic configurations (eg between parallel and antiparallel ones). This effect, in turn, describes the influence of electric current on magnetic configuration of the system. The magnetic switching may take place when electric current exceeds a certain critical value, and is due to absorption by the magnetic layer of a spin current component normal to the magnetization, which gives rise to spin-transfer torque.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium D, by Józef Barnaś
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-07-05 08:30 Revised: 2009-06-07 00:44