"Electron Spin Resonance in GdPdX compounds; X - p element"

Jerzy Jarosz ,  Ewa Talik 

Institute of Physics, Silesian University, Uniwersytecka 4, Katowice 40007, Poland

Abstract

It is well known that the relaxation processes in GdTX family; T – transition metal; depend very strongly on the contribution of the d states at the Fermi energy. However, when we fixed the d-metal it occurs that also different share of s and p electrons in valence band results in different bottleneck parameters observed in these compounds. In case of GdPdX compounds the bottleneck effect could even exceed that one, observed in GdAl2 compound .

 

Related papers
  1. Electronic structure of nanocrystals YF3­­: RE
  2. Electronic structure of nanocrystals YF3­­: RE

Presentation: poster at E-MRS Fall Meeting 2005, Symposium B, by Jerzy Jarosz
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-06-01 23:40
Revised:   2009-06-07 00:44