Band transitions in the InGaN system
University of California, Berkeley, CA 94720, United States
The InN – GaN ternary system is subject of ongoing research efforts because of the materials ability to tolerate an unusual high point – and extended defect density while exhibiting unique optoelectronic properties. Obviously, the large defect density must affect device performance. This experimental study in a transmission electron microscope addresses the need of imaging the host crystal without the effect from extended defects or other crystallographic phases. Valence electron energy loss spectroscopy (VEELS) with a monochromated electron beam is utilized allowing for high spatial (2 nm) and high energy (< 200 meV) resolution. The bandgap of various InN epilayers, deposited by molecular beam epitaxy, was measured to 1.7 eV (hexagonal system) and 1.4 eV (cubic system). Initial results on band transitions in ternary InGaN will also be given.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Petra Specht
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-06-01 05:39 Revised: 2009-06-07 00:44