III-Nitrides semiconductor compounds for microwave devices
|Marie-Antoinette di Forte-Poisson|
Alcatel-Thales III-V lab (ATL III-V), Domaine de Corbeville, Orsay 91404, France
Wide Band Gap semiconductors, such as SiC and GaN, exhibit many attractive properties far beyond the capabilities of Si and GaAs. GaAlN/GaN high electron mobility transistors (HEMTs) with very impressive power densities up to 11.2 W/mm at 10 GHz have been reported by Cornell, and recently up to 30 W/mm at 4 GHz by Cree Research. This rapid progress in the performance of microwave power transistors, as compared to results published in early 1998 (2 W/mm), has been obtained thanks to the use of SiC substrates instead of sapphire. In this paper, we report on a comparative study of the physical properties of GaAlN/GaN HEMT structures grown respectively on sapphire and silicon carbide substrates . The critical steps of the MOCVD growth process of GaN on SiC (substrate surface preparation, nucleation layer composition and growth parameters) are described and their effects on the physical properties of the HEMT structures and the associated device performances will presented.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Marie-Antoinette Poisson
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-31 14:31 Revised: 2009-06-07 00:44
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