X-ray high-resolution diffraction study of GaInAs and GaAsP grown by a modified Czochralski method
|Jerzy Gronkowski , Grzegorz Kowalski , Tomasz Słupiński|
Warsaw University, Institute of Experimental Physics (IEP UW), Hoża 69, Warszawa 00-681, Poland
Growth of bulk ternary crystals based on AIIIBV compounds with chemical compositions given by AxIIIB1-xIIICV or AIIIBxVC1-xV is a difficult task due to the thermodynamical properties of their solutions. The basic new idea used for an improvement of the homogeneity of the bulk samples is to control their growth by a supersaturation of the liquid solution while maintaining a constant temperature, and not by cooling as for binary compounds.
We report preliminary results of x-ray investigations of Ga1-xInxAs and GaAs1-xPx single crystals of sufficient parameter homogeneity for subsequent applications [1-3]. Our samples were studied using several methods: (i) high-resolution diffractometry which allowed to obtain both rocking curves and reciprocal-space maps of the diffracted and diffusely scattered intensity, (ii) diffraction plane-wave topography in the reflection mode. The components of alloy were added to the solution in the crucible prior to the growth. Due to component segregation, the homogeneity of ingots had to be characterised in different length scales by the above mentioned x-ray methods.
This work was supported by the State Committee of Scientific Research (grant No. 3T11B )39 26).
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Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Jerzy Gronkowski
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-31 10:26 Revised: 2009-06-07 00:44
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