Current-induced spin torque and the domain wall dynamics in magnetic nanowires

Vitalii Dugaev 3,6Vitor R. Vieira 3Pedro D. Sacramento 3Józef Barnaś 1,5Miguel A. Araujo 4Jamal Berakdar 2

1. Adam Mickiewicz University, Department of Physics, Umultowska 85, Poznań 61-614, Poland
2. Max Planck Institute of Microstructure Physics (MPI), Weinberg 2, Halle 06120, Germany
3. Department of Physics and CFIF, Instituto Superior Tecnico,, Av. Rovisco Pais, Lisbon 1049-001, Portugal
4. Departamento de Fisica, Universidade de Evora, Evora P-7000, Portugal
5. Polish Academy of Sciences, Institute of Molecular Physics, Mariana Smoluchowskiego 17, Poznań 60-179, Poland
6. NAS of Ukraine, Institute for Problems of Material Science, Chernitsi Department, 5 I.Vilde str., Chernivtsi 58001, Ukraine

Abstract

We discuss recent theoretical results on the problem of current-induced spin torque in magnetic nanowires. Our main focus is on sharp domain walls, for which the domain-wall width is of the same order or smaller than the Fermi wavelength of electrons. Such a case is more suitable for magnetic semiconductors than metals.

We present the results of our calculations of the spin and spin current densities related to different modes of the scattering states. The accumulated transverse components of the spin density and the spin current oscillate in the vicinity of the wall and they essentially affect its dynamics whereas the longitudinal part of the spin current is responsible for another component of the spin torque, which creates a force for the current-induced motion of the domain wall along the nanowire.

We also analyze the dynamics of the sharp domain wall using the standard Landau-Lifshits-Gilbert formalism and the two-component spin torque calculated for this model. The model with a large constant of easy-plane anisotropy allows to simplify essentially the analysis of the domain wall motion, and our main calculations are performed for this particular model. We show that the domain wall changes its shape depending on the wall velocity, and we calculate this velocity as a function of the electric current. Within the model considered, there exists a critical current for the instability of magnetic system with respect to the spontaneous motion of the domain wall.

Related papers
  1. Spin dependent tunneling through a quantum dot attached to ferromagnetic electrodes with non-collinear magnetizations
  2. Spin-valve effect in double-barrier systems with noncollinearly polarized magnetic barriers: linear response regime
  3. From Giant magnetoresistance to current-induced magnetic switching and excitations in magnetic structures
  4. Indirect tunneling between ferromagnetic electrodes
  5. Spin dynamics due to spin-transfer in magnetic spin valves
  6. Transport properties of a single level quantum dot in external magnetic field
  7. Torque due to spin-polarized current in ferromagnetic single-electron transistors with non-collinear magnetizations
  8. Electron Transport Through Nanoscopic Spin Valves
  9. Anomalous Hall Effect in IV-VI semimagnetic semiconductors
  10. Transport through magnetic grains in the Coulomb blockade regime
  11. Non-equilibrium Kondo effect in a single-channel quantum dot asymmetrically coupled to two reservoirs
  12. Optical characterization of GaN doping superlattices as grown, hydrogen implanted and annealed.

Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium D, by Vitalii Dugaev
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-28 16:31
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine