Surface modification/oxidation of GaAs in electrolytes for cell-cultivating bio-sensing devices
|Kazunari Ozasa 1,2, Shigeyuki NEMOTO 1, Masahiko HARA 1, Mizuo MAEDA 1|
1. Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako-Shi, Saitama 351-0198, Japan
The surface modification/oxidation of GaAs substrates in electrolytes has been investigated from the viewpoint of bio-sensing devices using AlGaAs/GaAs FET structures, where the cultivation of T2 cells directly on a bare gate-surface is intended for a high sensitivity to cell-activities such as adhesion or cell-cell interaction. The stability of GaAs surface (gate surface of FET) in DMEM solution (electrolyte for cell cultivation) is essential and must be elucidated in order to realize such cell-sensor devices, especially when gate-bias voltage is applied through the electrolyte.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Kazunari Ozasa
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-27 10:15 Revised: 2009-06-07 00:44
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