Influence of interface region and surrounding media of quantum dots on exciton binding energy.
|Anton A. Grigoriev 1, Vladimir G. Litovchenko 2,3|
1. V.Lashkaryov Institute of Semiconductor Physics NAS Ukraine (ISP), Nauky prosp., Kyiv 03028, Ukraine
We present theoretically investigation of excitonic effects on the energetic structure of silicon quantum dots in silicon oxide matrix. Calculations were performed taking into account the electron-hole Coulomb interactions, expanded interface area, leakage of electronic density from quantum dot and experimental values of barrier high.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium I, by Anton A. Grigoriev
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-26 11:34 Revised: 2009-06-07 00:44