Ni-Mn-Ga and Ni-Mn-Ga-Ge Thin Films

Janusz Dubowik 1Iwona Goscianska 2Yuri Kudryavtsev 3

1. Polish Academy of Sciences, Institute of Molecular Physics, Mariana Smoluchowskiego 17, Poznań 60-179, Poland
2. Adam Mickiewicz University, Department of Physics, Umultowska 85, Poznań 61-614, Poland
3. G.V. Kurdyumov Institute for Metal Physics National Academy of Sciences (IMP), Vernadsky Blvd. 36, Kyiv UA03680, Ukraine


Depending on a deposition method and post-deposition annealing, the magnetic properties of Ni-Mn-Ga films can vary substantially. Even in the well annealed films the influence of the martensitic transformation ­- the most characteristic feature of Ni­-Mn­-Ga ­- on their magnetic properties is either very small or is substantial.

The aim of this contribution is to elucidate the origin of these contradictions having a large number of experimental results on the sputtered and flash­-deposited Ni­-Mn­-Ga films of various compositions ( NixMnyGaz) and Ni50Mn25Ga25-xGex films heat-treated at various temperatures (from 620 - 973 K). The magnetic properties were investigated with ferromagnetic resonance in a wide temperature range and are compared with electric resistivity data. We show that the anomalous magnetic behavior of the Ni-Mn-Ga films annealed at T<800 K results from their columnar microstructure (which determines the effective shape anisotropy of these nominally heterogeneous films) and changes in the magnetic anisotropy due to the martensitic transformation. The films annealed at the highest temperatures reveal the magnetic behavior typical of normal ferromagnetic films, in which the effect of the martensitic transformation is strongly reduced due to constraint of a substrate. Ge substitution of Ga in Ni-Mn-Ga-Ge films has a detrimental effect on the martensitic transformation.


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Presentation: poster at E-MRS Fall Meeting 2005, Symposium C, by Janusz Dubowik
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-25 08:10
Revised:   2009-06-07 00:44