Transport properties of the two-dimensional electron gas in GaN/AlGaN heterostructures grown by ammonia molecular-beam epitaxy

A J. Nikitin 1A G. Pogosov A V. Budantsev R A. Lavrov V V. Preobrazhenskii V G. Mansurov K S. Zhuravlev 

1. Institute of Semiconductor Physics SB RAS, Lavrentjeva 13, Novosibirsk 630090, Russian Federation


Electron transport properties and weak localization of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures were experimentally investigated. Samples with the Al0.35GaN0.65/GaN heterojunction were grown by ammonia molecular-beam epitaxy (MBE) on sapphire substrates under nitrogen-rich conditions. Electron concentration and mobility in 2DEG under the temperature 4.2 К were ns = 1.7x1013 cm-2 and μ = 2 000 cm2/Vs, respectively.

At the temperature of 4.2 К the δσ(B) experimental dependence the δσ(B) is described quite well by the quantum correction to the 2D system conductivity in the approximation of the effective length of phase coherence l*φ: δσ(B)=(αe2/2π2ħ) [Ψ(1/2+ħ/2Be(l*φ)2)–Ψ(1/2+ħ/2Bel2–2ln(l*φ/l)], where l is the transport free path, α is the system geometry parameter, Ψ(x) is digamma function.

However, at the temperature of 1.8 К it is impossible to approximate the experimental dependence δσ(B) in the measured magnetic field range by the above dependence with only one adjustable parameter l*φ. In weak magnetic fields, when lB=(h/2πeB)1/4>>lφ=(2Dτφ)1/2, the conductivity correction is ~ l4φ/l4B. When lB is about lφ, this correction is ~ ln(lφ/lB). So for two conductivity subbands the effective length of phase coherence is l*iφ=((l*φ1)4+(l*φ2)4))1/4 in weak magnetic fields and l*iiφ=(l*φ1 l*φ2)1/2 in large magnetic fields.

The fact that δσ(B) is well described by only one effective length at the high temperature can be explained by the inter subband scattering which results in averaging of the effective lengths.

The work is supported by RFBR (grants nos. 05-02-17259a, 05-02-16901-а)

Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by A J. Nikitin
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-23 06:06
Revised:   2009-06-07 00:44
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