Epitaxy Control and Characterization of InN, InN-based Ternary Alloys, and Their MQW-structures
|Akihiko Yoshikawa 1,2,3, Song-Bek Che , Yoshihiro Ishitani , Xinqiang Wang , Wataru Terashima|
1. Chiba University, Department of Electronics and Mechanical Engineering, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
We have pointed out for the epitaxy of InN and InN-based ternary alloys that N-polarity growth regime is preferable than In-polarity one in the viewpoint of getting higher-quality epilayers as well as constructing fine structure InN-based heterojunctions. This situation is very much different from that of other typical III-nitrides of GaN, AlN and Ga(Al)-rich ternary/quaternary alloys including InGaN, where Ga- or Al- polarity is better than N-polarity. The reason for the different situation in epitaxy of InN-based III-nitrides is attributed to that of about 100 deg higher possible-epitaxy temperatures in N-polarity than In-polarity (~600 deg for N-polarity but ~500 deg for In polarity). The higher epitaxy temperatures result in both (a) much easier epitaxy control under around unity surface stoichiometry to avoid the appearance of In-droplets on the surface during growth and (b)better matching in epitaxy temperatures between InN-well and GaN and/or AlN-based barriers when fabricating InN-based nano-heterostructures.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Akihiko Yoshikawa
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-20 09:08 Revised: 2009-06-07 00:44