Epitaxy Control and Characterization of InN, InN-based Ternary Alloys, and Their MQW-structures

Akihiko Yoshikawa 1,2,3Song-Bek Che Yoshihiro Ishitani Xinqiang Wang Wataru Terashima 

1. Chiba University, Department of Electronics and Mechanical Engineering, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
2. Chiba University, Center for Frontier Electronics and Photonics, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
3. Chiba University, InN-Project as a CREST-program of JST, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

Abstract

We have pointed out for the epitaxy of InN and InN-based ternary alloys that N-polarity growth regime is preferable than In-polarity one in the viewpoint of getting higher-quality epilayers as well as constructing fine structure InN-based heterojunctions. This situation is very much different from that of other typical III-nitrides of GaN, AlN and Ga(Al)-rich ternary/quaternary alloys including InGaN, where Ga- or Al- polarity is better than N-polarity. The reason for the different situation in epitaxy of InN-based III-nitrides is attributed to that of about 100 deg higher possible-epitaxy temperatures in N-polarity than In-polarity (~600 deg for N-polarity but ~500 deg for In polarity). The higher epitaxy temperatures result in both (a) much easier epitaxy control under around unity surface stoichiometry to avoid the appearance of In-droplets on the surface during growth and (b)better matching in epitaxy temperatures between InN-well and GaN and/or AlN-based barriers when fabricating InN-based nano-heterostructures.
In this paper, we report our recent results on the epitaxy of N-polarity InN-based ternary alloys of InGaN and AlInN both on GaN and InN underlayers. Further, we have investigated to fabricate InN-based nano-heterostructures including InN/GaN, InN/InGaN, and InN/AlInN MQWs under the N-polarity growth regime.
The InN-based epilayers and MQWs were characterized by HR-XRD, AFM, TEM, Hall and PL measurements. We have succeeded for the first time in fabricating very fine InN-based nano-heterostructures which were revealed by the clear satellite diffraction peaks and sharp hetero-interfaces by XRD and TEM, respectively.
Finally we conclude that the N-polarity growth regime is very important in the epitaxy of InN itself, InN-based ternary alloys and fine MQWs structures.

Related papers
  1. Polarity determination of InN by using circular photogalvanic effect
  2. Recent advances and challenges in p-type doping of InN and InN-based novel nanostructures
  3. Effects of threading dislocations and other defects on reduction of band-edge photoluminescence in n-InN films

Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Akihiko Yoshikawa
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-20 09:08
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine