Study on Ferromagnetism of GaMnN

Saki Sonoda 5Tanaka Isao 1Hidekazu Ikeno 1Tomoyuki Yamamoto 2Fumiyasu Oba 1Koichi Kindo 3,6Hidenobu Hori 4Tsutomu Araki 7Yasushi Nanishi Yoshiyuki Yamamoto 4Ken-ichi Suga 6Youichi Akasaka 5

1. Kyoto University, Department of Materials Science and Engineering, Kyoto, Japan
2. Department of Material Science and Engineering, Waseda University, Tokyo, Japan
3. The Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan
4. School of Material Science, Japan Advanced Institute of Science and Technology, Nomi, Japan
5. Department of System Innovation, Osaka University, Toyonaka, Japan
6. KYOKUGEN, Osaka University, Toyonaka, Japan
7. Department of Photonics, Ritsumeikan University, Kusatsu, Japan

Abstract

We review crystallographic, spectroscopic, magnetic and electrical properties of Mn-doped GaN films showing ferromagnetic behaviour at room temperature. Up to 8.2% of Mn concentration, the films keep transpearency with yellowish colour even with thickness more than 1μm. No second phase is observed by RHEED and XRD measurements. It was found that majority of Mn atoms replace Ga atoms in wurtzite GaN by XAFS study. At room temperature, optical absorption spectra show clear structures implying Mn 3d levels stay in the mid-gap of GaMnN.

 

Presentation: poster at E-MRS Fall Meeting 2005, Symposium D, by Saki Sonoda
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-20 00:33
Revised:   2009-06-07 00:44