Indium Nitride: A Material with Photovoltaic Promise and Challenges
|William A. Doolittle 1, Elaissa Trybus , Gon Namkoong , Walter Henderson|
1. Georgia Institute of Technology (GIT), 777 Atlantic Dr., Atlanta, GA 30332-0250, United States
With the revision of the bandgap of InN down to about ~0.65eV, the III-Nitride material system has been touted as a promising photovoltaic material system. There is clearly potential for new and promising photovoltaic devices. However, several key challenges exist to reach this goal. Issues with mismatched tandem cells creating minority carrier recombination enhancing defects, sufficient p-type doping to demonstrate tunnel junctions, dealing with limited minority carrier diffusion lengths, and many other issues will be addressed.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by William A. Doolittle
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-19 20:31 Revised: 2009-06-07 00:44