MOVPE growth of InN on Sapphire
|Wolfgang Richter 1, Massimo Drago 1, Udo W. Pohl 1, Christoph Werner 1, Patrick Vogt 1, Norbert Esser 2, Markus Pristovsek 1|
1. Berlin University of Technology, Hardenbergstr. 36, Berlin 10623, Germany
Today, the challenge for InN is the growth of epitaxial materials with low defect density and high electron mobility. MBE achieved first good layers in 2003 (Shaff et al.), but recently also MOVPE has shown encouraging results (Briot et al., 2004). But even then, the necessity of a material with uniform properties is reflected in the high dispersion of InN bandgap values proposed up to now. Good crystal quality is also the prerequisite for the fabrication of promising InN based electronic devices. Sapphire is presently the most used substrate for both epitaxial techniques, due to the experience gained in GaN epitaxy during the last 15 years. It is well known, for both GaN and InN, that sapphire nitridation is a necessary step to improve the layer quality. Since InN peculiarities require a careful and dedicated study, the effects of different sapphire nitridation procedures on the properties of InN epitaxial layer will be the focus of this presentation.
Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by Massimo Drago
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-19 18:50 Revised: 2009-06-07 00:44