Optoelectronic devices based on nitride semiconductors
OSRAM Opto Semiconductors GmbH, Wernerwerkstrasse 2, Regensburg D-93049, Germany
Over the last ten years the importance of optoelectronic devices based on nitrides grew enormously due to their advantages compared to conventional light sources like incandescent and halogen light bulbs, which are mainly high lifetime, small size and meanwhile the higher wall plug efficiency. Ga(In,Al)N-compound semiconductors are suitable for light emitting devices like LEDs and Lasers due to their direct bandgap. The emission wavelength of the device is defined by the In-content in the GaInN-Quantum-Wells within a pn-junction. Thus, it is possible to realize light emission in the ultraviolet and almost the whole visible spectral range. By combining blue, green and red LEDs or blue LEDs with phosphorus for colour conversion a huge colour variation is possible including white.
Presentation: invited oral at E-MRS Fall Meeting 2005, Plenary session, by Volker Haerle
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-18 07:50 Revised: 2009-06-07 00:44
|© 1998-2018 pielaszek research, all rights reserved||Powered by the Conference Engine|