There is a growing interest in the Anomalous Hall Effect (AHE) due to the importance of the spin polarization and spin-orbit interaction for transport properties of materials and structures of spin electronics. In ferromagnetic metals and in magnetic semiconductors where the AHE can be observed, the transverse resistivity ρ_H contains a contribution proportional to magnetization M in addition to the usual Hall effect: ρ_H=R₀B+μ₀R_SM, where B is the magnetic field, R₀ and R_S, respectively, are the normal and anomalous Hall coefficient, and μ₀ is the magnetic constant. The purpose of our work is to study the AHE in IV-VI narrow gap ferromagnetic semiconductors: Sn_1-xMn_xTe, Sn_1-x-yMn_xEr_yTe, Sn_1-xMn_xEu_yTe. The IV-VI systems were chosen for several reasons. These materials crystallize in the simple NaCl structure. Their energetic structure parameters are well known. The Curie temperatures are in the range 10-25 K what allows to perform measurements in a wide temperature range below and under the Curie temperature.

The samples used in our experiments were grown by the modified Bridgman method, their chemical composition was measured by microprobe technique and by X-ray dispersive fluorescence analysis. The Sn_1-xMn_xTe samples had 7.5% and 12% of manganese, Sn_1-x-yMn_xEr_yTe had 5.8% and 6% of manganese, and about 0.05% of erbium,the Sn_1-x-yMn_xEu_yTe sample had 12.8% of manganese and 1.4% of europium. The Hall effect and electric conductivity measurements (up to 13 T in the temperature range 1.5-60 K) were performed using the standard DC technique. Magnetic properties were studied using Lake Shore 7229 Magnetometer/Susceptometer. Magnetization of those samples was measured at magnetic fields up to 9 T for the same temperatures as the /chi(T) dependence. As the result of the studies, both R₀ and R_S were evaluated and their dependence on temperature estimated.

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