Impact of internal electric fields for GaInN/GaN quantum wells in light emitting diodes

Johannes Binder 1Krzysztof P. Korona 1Jolanta Borysiuk 1Andrzej Wysmolek 1Martina Baeumler 2Klaus Köhler 2Lutz Kirste 2

1. University of Warsaw, Institute of Experimental Physics (IFDUW), Hoża 69, Warsaw 00-681, Poland
2. Fraunhofer-Institute of Applied Solid State Physics, Tullastr. 72, Freiburg 79108, Germany


GaN based structures are playing an important role in illumination technology, since they are widely used in light emitting diodes (LEDs). The good efficiency of the LEDs opens up a way towards an energy saving future of illumination. To further improve the performance of such devices a deeper understanding of processes involved in light emission is required.

In this work we present measurements of three samples containing quantum wells (QWs) of different width. The samples were grown by MOCVD on a sapphire substrate with indium content being about 10%.

The structures were characterised by photoluminescence (PL), electroluminescence (EL) and photocurrent (PC) measurements. The comparison of absorption (measured by PC) and emission (PL and EL) on the same sample revealed a shift in energy with the emission energy being significantly lower. These shifts can be interpreted by the quantum confined Stark effect (QCSE). The effect was more pronounced for wider QWs, as expected from theory.


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Presentation: Poster at Warsaw and Karlsruhe Nanotechnology Day, by Johannes Binder
See On-line Journal of Warsaw and Karlsruhe Nanotechnology Day

Submitted: 2011-09-19 17:48
Revised:   2011-09-19 17:48