Gamma spectroscopy with room temperature semiconductor detectors and scintillation probes operating without PMT
EURORAD C.T.T., 23, Rue du Loess - BP 20, Strasbourg F-67037, France
In recent years, wide gap semiconductor materials, such as CdTe and CdZnTe made substantial progress, which makes them competitive for high sensitivity gamma-ray detection under small volumes and without any cooling, as needed for homeland security problems. Nowadays, high resistivity large crystals become available and the earlier charge transport problems can be solved either electronically or by specific detector geometry structures. Single charge sensing detectors, either pixelized, coplanar, hemispherical structures allow to minimize the hole trapping problem and considerably improve the energy resolution for sizing of at least 1 cm3 (equivalent to approx. 5 cm3 Germanium).
Presentation: invited oral at NATO Advanced Research Workshop, by Małgorzata Sowińska
See On-line Journal of NATO Advanced Research Workshop
Submitted: 2004-08-10 16:31 Revised: 2009-06-08 12:55