Search for content and authors
 

X-ray imaging for applied and industrial research - applications in microelectronics and in micro system technology

tilo baumbach 2,6L. Helfen 2,4P. Mikulik 2,5P. Pernot 2,3Daniel Luebbert 1D. Kiel 1S. Keller 4P. Cloetens 3José Baruchel 3

1. Forschungszentrum Karlsruhe (FZK), Postfach 3640, Karlsruhe D-76021, Germany
2. Fraunhofer Institute for Nondestructive Testing (EADQ) (EADQ), Kruegerstrasse 22, Dresden 01326, Germany
3. European Synchrotron Radiation Facility (ESRF), Grenoble 38043, France
4. University of California, Santa Barbara, CA 93106, United States
5. Masaryk University, Faculty of Sciences, Kotlarska 2, Brno 61137, Czech Republic
6. Forschungszentrum Karlsruhe GmbH, Institute für Synchrotronstrahlung, ANKA, Hermann-von-Helmholtz-Platz 1, Karlsruhe 76344, Germany

Abstract

Development and production of new materials and their application in various branches of microelectronics and microsystem technology require information on their structural perfection. Of crucial importance are structural properties and their relations to technological steps involved with their production. Moreover, the investigation of structure-property relationships for component as well as entire devices is needed.
Beside laboratory methods a reliable availability of experimental set-ups/stations at SR sources with unique properties (high intensity, small focus, high brilliance, good coherence of radiation) opens up advanced possibilities for nondestructive material characterization and for nondestructive testing of components of applied and industrial research labs. The talk gives an overview illustrating x-ray imaging inspection and defect analysis in this context by results from microelectronics and microsystem technology, such as

-ultra-thin Si for smart wafers, macrodefects in GaAs, dislocation density mapping
-growth and quality of GaN-ELO structures on sapphire and SiC
-metallization layers: stress migration in Cu conducting lines
-lasers: deformation fields in high-power laser bars
-interconnection technology: inspection of Al and Au wire bonding in glop-tops
-flip-chip technology: inspection of solder bumps in sensor arrays and pixel detectors
-microfluidics: hydrodynamical permeability of microfilters
-MOEMS (micro-opto-electro-mechanical structures): stress in micro-mirror arrays

Imaging techniques of absorption-, phase- and diffraction contrast (holo-tomography, micro-diffraction, rocking curve imaging) are employed. Results of computed laminography are reported which was developed and implemented with SR for the first time and can be considered as a successful extension of 3D imaging to flat, laterally extended devices such as microelectronic circuit boards. Conclusions for requirements to future detector development will
be given.

 

Legal notice
  • Legal notice:
 

Related papers

Presentation: invited oral at E-MRS Fall Meeting 2004, Symposium D, by tilo baumbach
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-07-27 10:46
Revised:   2009-06-08 12:55