Giant tunnel magnetoresistance in organic magnetic tunnel junctions: A new insight into molecular spintronics

Clement Barraud 1Pierre Seneor 1Richard Mattana 1Stéphane Fusil 1Karim Bouzehouane 1Cyrile Deranlot 1Frédéric Petroff 1Albert Fert 1Patrizio Graziosi 2Luis E. Hueso 2Ilaria Bergenti 2Valentin A. Dediu 2

1. Unité Mixte de Physique CNRS-Thales, Route départementale 128, Palaiseau 91767, France
2. Istituto per lo Studio dei Materiali Nanostrutturati (ISMN-CNR), Gobetti 101, Bologna 40129, Italy


Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility.  Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how to tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.


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Presentation: Invited oral at E-MRS Fall Meeting 2009, Symposium E, by Pierre Seneor
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-06-02 15:54
Revised:   2009-08-13 17:33