Giant tunnel magnetoresistance in organic magnetic tunnel junctions: A new insight into molecular spintronics
|Clement Barraud 1, Pierre Seneor 1, Richard Mattana 1, Stéphane Fusil 1, Karim Bouzehouane 1, Cyrile Deranlot 1, Frédéric Petroff 1, Albert Fert 1, Patrizio Graziosi 2, Luis E. Hueso 2, Ilaria Bergenti 2, Valentin A. Dediu 2|
1. Unité Mixte de Physique CNRS-Thales, Route départementale 128, Palaiseau 91767, France
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how to tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.
Presentation: Invited oral at E-MRS Fall Meeting 2009, Symposium E, by Pierre Seneor
See On-line Journal of E-MRS Fall Meeting 2009
Submitted: 2009-06-02 15:54 Revised: 2009-08-13 17:33