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The influence of laser shock waves on anodic oxide-HgCdTe interface

Nicolas N. Berchenko 1,2Vitalij S. Yakovyna 2

1. University of Rzeszow, Institute of Physics, Rejtana 16, Rzeszów 35-310, Poland
2. Lviv Polytechnic National University, Semiconductor Electronics Department, Bandera Street, 12, Lviv 79013, Ukraine

Abstract

Anodic oxide is widely used to passivate HgCdTe-based photoconductive detectors. However structures on anodic oxide have not sufficient stability. This makes necessary developing a new method to improve thermal stability of such structures. The laser shock wave treatment seems a promising option. Neodymium-glass laser pulses with 30 ns width were used to induce a shock wave in the samples under room temperature. The experiment has shown that the induced positive charge value an the anodic oxide- HgCdTe interface approached to its constant value under influence of laser shock waves. This kind of treatment is found to decrease electron concentration in a converted n-type layer by one order of magnitude in annealed anodic oxide- HgCdTe structures. Additionally, the findings show that the annealing time needed to have this layer disappeared decreases as well. The most relevant mechanism of the interaction between laser shock waves and the anodic oxide- HgCdTe interface in believed to involve the interface rebuilding which implies that elemental mercury and related charge is pressed back from the CdTeO3 layer being right on the interface, and complexes with oxygen vacancies are formed.     

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium D, by Nicolas N. Berchenko
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-30 18:15
Revised:   2009-06-07 00:48