Impact of tunnel junctions for spin injection in graphene.

Bruno Dlubak 1Pierre Seneor 1Abdelmadjid Anane 1Clement Barraud 1Stéphane Fusil 1Karim Bouzehouane 1Cyril Deranlot 1Bernard Servet 2Stéphane Xavier 2Richard Mattana 1Frédéric Petroff 1Albert Fert 1

1. Unité Mixte de Physique CNRS-Thales, Route départementale 128, Palaiseau 91767, France
2. Thales Research and Technology (TRT), Route Départementale 128, Palaiseau 91767, France

Abstract

Graphene, whereas in sole or few layers, has aroused a considerable interest for spintronics. This is mainly due to its high mobility and long spin diffusion length expected up to room temperature. In line with the early results of spintronics, conventional tunneling barriers of MgO or alumina have been used in order to inject spins into the graphene/graphite layer up to now.We studied the influence of both spin dependent barriers on the exfoliated graphene properties. We will first present the results of studies (Raman spectroscopy, TEM...) on the chemical compatibility of graphene with spin-dependant tunnel barrier (MgO, Al2O3). In the case of alumina, a 0.6nm Al film is deposited and then oxidized in pure O2. In the case of MgO, the sputtering is done directly from a MgO polycristaline target. This will be followed by a presentation of transport properties.

 

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Presentation: Oral at E-MRS Fall Meeting 2009, Symposium E, by Bruno Dlubak
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-25 18:43
Revised:   2009-06-07 00:48