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Structural and optical properties of ZnO epitaxial layers grown on ZnO buffer layers with different interrupts by molecular beam epitaxy

Su Min Jeon 1Min Young Cho 1Hyun Young Choi 1Ghun Sik Kim 1Do Yeob Kim 1Min Su Kim 1Tae Hoon Kim 1Jin Soo Kim 2Jong Su Kim 3Jeong-Sik Son 4Joo In Lee 5Jae-Young Leem 1

1. Inje University, Center for Nano Manufacturing, Department of Nano Systems Engineering, Gimhae 621-749, Korea, South
2. Chonbuk National University, Division of Advanced Materials Engineering, Jeonju 561-756, Korea, South
3. Yeungnam University, Department of Physics, Gyeongsan 712-749, Korea, South
4. Kyungwoon University, Department of Visual Optics, Gumi 730-850, Korea, South
5. Korea Research Institute of Standards and Science, Nanosurface Group, Daejeon 305-340, Korea, South

Abstract

ZnO epitaxial layers were grown on low temperature (LT) ZnO buffer layers/p-type Si (100) substrates by plasma-assisted molecular beam epitaxy (PA-MBE). The buffer layers were grown with different interrupts (4, 6, 9, and 19 times) in oxygen plasma. The interrupts time for all the samples was kept constant in 2 min. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) were carried out to investigate the structural and optical properties of the ZnO epitaxial layers. The XRD rocking curves of all the samples show the typical peaks such as ZnO (002), Si, and ZnO (004). The XRD peak position was dependent on the interrupts times. The (002) diffraction peak position and the lattice constant of the ZnO epitaxial layer with the interrupts of 9 times were almost in agreement with the unstressed ZnO powder value of 34.43° and 5.2066 Å. The ZnO epitaxial layer with the 9 times of the interrupts also shows a narrower and more symmetric near band edge emission (NBEE) peak shape with a linewidth 111 meV. The SEM observation shows that the as-grown ZnO epitaxial layer grew in columnar shape. The surface morphologies were changed from worm-like shape to columnar shape with decreasing the interrupts times of LT-ZnO buffer layers. The thickness of the ZnO epitaxial layers were also affected by the interrupts times of LT-ZnO buffer layers.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Su Min Jeon
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-23 08:58
Revised:   2009-06-07 00:48