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Annealing effects of the initial Zn layers on properties of ZnO thin films grown by plasma-assisted molecular beam epitaxy

Ghun Sik Kim 1Su Min Jeon 1Min Young Cho 1Hyun Young Choi 1Do Yeob Kim 1Min Su Kim 1Jin Soo Kim 2Jong Su Kim 3Joo In Lee 4Jae-Young Leem 1

1. Inje University, Center for Nano Manufacturing, Department of Nano Systems Engineering, Gimhae 621-749, Korea, South
2. Chonbuk National University, Division of Advanced Materials Engineering, Jeonju 561-756, Korea, South
3. Yeungnam University, Department of Physics, Gyeongsan 712-749, Korea, South
4. Korea Research Institute of Standards and Science, Nanosurface Group, Deajeon 305-340, Korea, South

Abstract

ZnO thin films with initial Zn layers were grown on p-type Si (100) by plasma-assisted molecular beam epitaxy (PA-MBE). Before the growth of the ZnO thin films, the initial Zn layers were deposited on the Si substrates for 4 minutes and then annealed at the different substrate temperature ranging from 500 to 700 oC in oxygen plasma. The annealing effects of the initial Zn layers on properties of the ZnO thin films have been investigated by room temperature (RT) photoluminescence (PL), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). In the UV and visible range, near-band edge emission (NBEE) at 3.3 eV and trap-state or deep-level emission (DLE) around 1.9 to 2.1 eV were observed. The as-grown sample showed a broad and asymmetric NBEE. The NBEE peaks of the samples with the annealed initial Zn layers (from 500 to 700 oC) showed narrower and higher symmetric shape. The PL intensity ratio of the NBEE to DLE for the sample annealed at 500 oC was the largest. The XRD rocking curves of all the samples showed the typical peaks such as ZnO (002), Si, and ZnO (004). The ZnO (002) peak intensity of the XRD spectra was relatively dominant. The PL spectra, the XRD spectra, the strain, and the surface morphology for the ZnO thin films were affected by the annealing process.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Ghun Sik Kim
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-22 19:55
Revised:   2009-06-07 00:48