The atomic force microscope (AFM) has exhibited its capbility to fabricate the nano-scale electronic devices. We have fabircated superconducting flux flow transistors (SFFTs) using superconducting thin films. The SFFT, which is composed of two stripe lines is characterized as a transresistance device: one stripe is as a source and drain terminal, the other is as a gate termianl. The important process is to fabricate a channel with sufficient reproducibility and controllability in fabricating SFFT. Generally, the channel of SFFT has been fabricated by the chemical wet etching methods and dry etching method. In this study we present a new fabrication of multi-channels SFFT using the artificial pattern formation method based on the AFM nano-oxidation process. The critical current density in the multi-channels of the fabricated SFFT was decreased by the applied current in a control current line. Comparing the measured with theoretical results, it is shown that the critical current of SFFT with two channels is larger than the critical current of single channel due to the magnetic coupling between channels.

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1. Critical Characteristics of Superconducting Thin Films Modified by an Atomic Force Microscope
2. Current-Voltage Characteristics of Superconducting Flux Flow Transistor with Multi-Channel Fabricated by Inductively Coupled Plasma
3. Proposal of DC Dual Reactor Type Superconducting Fault Current Limiter using Switching Operation of YBCO Thin Film
4. Fault Current Limiting Characteristics of New Resistive Type Superconducting Fault Current Limiter using Flux Linkage