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Nitrogen-doped and Antimony-doped ZnO thin layers grown by MO-VPE

Nadia Hanèche 1Alain Lusson 1Corinne Sartel 1Ali Marzouki 1Vincent Sallet 1François Jomard 1Meherzi Oueslati 2Pierre Galtier 1

1. CNRS-Université de Versailles St Quentin (GEMAC), 1 place A. Briand, Meudon 92195, France
2. Faculté de Sciences mathématiques, physiques et naturelles de Tunis (FST), Campus Universitaire Tunis 1060, Tunis 1060, Tunisia

Abstract

ZnO, the wide band gap semiconductor, is a very promising material for blue and UV applications meanwhile the p–type conductivity in ZnO is difficult to obtain routinely. In general, the p-type doping is obtained from the substitution of oxygen atoms by column V elements.

In this study the Nitrogen-doped and Antimony-doped ZnO layers have been grown by metal organic vapour phase epitaxy (MO-VPE) on sapphire and ZnO substrates at high temperature (950 °C) and low pressure conditions (50 torr). Nitrous oxide and diethyl-zinc as the oxygen and zinc precursors have been used. The incorporation of nitrogen and antimony has been obtained from the decomposition of tributhyl-nitrogen and triethyl-antimony molecules respectively. According to the growth parameters, the layers show a flat surface or a structured surface and sometimes with some nano-structurations. The nitrogen and antimony incorporation was checked by secondary ion mass spectroscopy (SIMS), the impurities are ranged from 1018 to 1020 at/cm-3. The doped layers were investigated by optical characterisations: Raman scattering and photoluminescence spectroscopy. In N-doped layers we have observed several Raman lines from local vibrational modes related to nitrogen. Low temperature photoluminescence spectra exhibit donor-acceptor pair (DAP) transitions around 3.23 eV on both N-doped and Sb-doped layers. The DAP transitions have been investigated from temperature-dependant or excitation power-dependant experiments.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2009, Symposium C, by Alain Lusson
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-11 15:25
Revised:   2009-06-07 00:48