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Influence of thickness of PbS thin films on the scattering mechanis

Dmytro M. Freik ,  Lyubomyr I. Nykyruy ,  Ivan V. Kalytchuk ,  Volodymyr F. Pasichnyak 

Physical-Chemical Institute at the 'Vasyl Stefanyk' Prekarpathian University (PCI), 57, Shevchenko Str., Ivano-Frankivsk 76000, Ukraine

Abstract

The thickness dependence of Hall mobility is explored on the films of n-PbS, grown from a vapor phase by the "hot-wall" method of on (111) BaF2.
Experimental dependence of mobility were approximated by the in a theory expected values, which take into account carriers scattering, characteristic both for massive samples, and thin films. So, in particular, scattering taken into account on deformation potentials of acoustic and optical phonons, polarization potential of optical phonons, on the ionized admixtures and on dislocation of disparity, on a border the film-substrate, border of corns and dispersion, conditioned by surfaces effects.
It is set, that critical thickness of tapes, which the net of distribution, even 12 nm, will appear after, and dispersion on dislocation of disparity prevails to the thickness 0,4 nm, carrier scattering on border of corns characteristically for 1,5-2 nm. At films thickness anymore than 2 nm basic contribution in mobility gives scattering on the films surface. A value of free length was taken on at computations 50 nm, and as by a volume mobility the expected 400 cm2 V-1 s-1.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium H, by Dmytro M. Freik
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-28 16:14
Revised:   2009-06-08 12:55