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Electrical and optical properties of HgTe/CdTe superstructures

Ihor S. Virt 1,3,  Igor S. Bilyk 1,  Fedir F. Sizov 2,  Zenoviya F. Tsybriy ,  Alexsandr G. Golenkov 2

1. Drogobych State Pedagogical University, Ivan Franko st., 24, Drogobych 82100, Ukraine
2. Institute for Physics of Semiconductors of NAS of Ukraine, 45 Prospekt Nauki, Kyiv 03028, Ukraine
3. University of Rzeszow, Institute of Physics, Rejtana 16, Rzeszów 35-310, Poland

Abstract
Recently, much attention has been given to the potential of superlattices and heterostructures employment as the far infrared detectors [1]. In this work we investigated optical and electrical properties of HgTe/CdTe superstructures. Superstructures in the form of HgTe/CdTe thin films were obtained by the laser-beam successive evaporation of HgTe and CdTe targets using YAG:Nd laser (λ=1064 nm) with repetition rate of f=0.5 Hz. The films were evaporated at different temperatures and laser irradiation parameters onto Al2O3 and BaF2 substrates with pre-deposited Ag contacts. The change of electrical resistance of the growing layers was measured by METEX multimeter connected with PC. Films resistivities were calculated and their time dependences during deposition process were determined for substrate temperatures of 30 and 200ºC. High resistivities were observed for the case of very thin films (lower than 40 nm). It was determined that the increasing of metal adhesion coefficient is the prevailing process during initial stage of films growth. Extrinsic carrier’s concentrations were estimated from the results of optical measurements. Correlation between films thickness and their electric and optical properties was established.

 [1]. C.H. Grein, H. Jung, R. Singh, M.E. Flatte Journal of Electronic materials, V. 34, N.6, 2005, 905-908

 

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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium D, by Ihor S. Virt
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-04-23 17:12
Revised:   2009-06-07 00:48