The process of self-compensation of conductance in Cd {1-x} Zn_x Te:Cl (x=0,05) crystals was investigated with annealing of the singlecrystal samples in Cd vapors. The samples were stood at temperature 900С under controlled pressure of Cd during the time necessary for setting of diffusion homogeneity of charged lattice defects concentration; then they were slowly cooled up to room temperature. Concentration of Cl in the crystal in this process remains constant and concentration of Cd vacancies is determined by pressure of Cd vapour above the sample.
Concentration of free charge carriers in the samples after annealing (n and p) was defined by measuring of Hall effect. Low n and p values in the obtained samples testify to the deep self-compensation in the crystal in the annealing conditions. The characteristic feature of obtained results is low value of n = 10⁷-10⁹ cm ^-3 for wide range of cadmium vapour pressure changes. It considerably differs from analogous dependence of selfcompensation in CdTe:Cl crystals [1]. It is possible to explain this difference by the strong influence of zinc on concentration of the deep center responsible for selfcompensation in a band gap of the semiconductor, i.e. by participation of Zn in creation of the charged lattice defect.
[1]. Matveev O.A. and Terent'ev A.I. Semiconductors, 1993, v.27, n.11-12, pp.1043-1047.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/1727 must be provided.